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Vertical Laminar Flow Rinse Tank

IP.com Disclosure Number: IPCOM000041216D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hango, RA: AUTHOR [+3]

Abstract

By means of upward vertical, laminar flow of deionized (DI) water in overflow rinse tank, the problems of recontamination of in-process semiconductor wafers by floating surface particulates and/or active process chemicals is avoided.

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Vertical Laminar Flow Rinse Tank

By means of upward vertical, laminar flow of deionized (DI) water in overflow rinse tank, the problems of recontamination of in-process semiconductor wafers by floating surface particulates and/or active process chemicals is avoided.

Referring to the figure, a carrier 2 of in-process semiconductor wafers 4 is immersed in DI water 6 in rinse tank 8. At the time of entry of wafers for rinsing, DI water is flowing at a low rate from source 12 through low rate bypass 14 and filter 16 to nozzles 18 and through filter 20 to distribution loop 22. Early in a rinse cycle, high flow solenoid valve 10 is opened to bring DI water from source 12 at high flow rate through filter 16 to high flow nozzles 18. Nozzles 18 are dispersed between wafers 4 to create a high rate of upward laminar flow. Water from filter 20 and distribution loop 22 continually stirs the rinse water at the bottom of the tank and pressurizes water to flow upward through diffuser plate 24. Water from the surface of the tank, which contains the majority of the particulate matter and of the active process chemicals, overflows at all times and goes to drain 26.

At the end of a rinse cycle, following removal of wafers 4 in carrier 2, valve 10 is closed allowing slow flow of DI water through bypass 14, filter 16, and nozzles
18. DI water flows at all times at a constant low rate from source 12 through filter 20 and distribution loop 22. This continuous upward motion and overflow...