Browse Prior Art Database

Novel Uvlsi Mos Transister Design

IP.com Disclosure Number: IPCOM000041232D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fredericks, E: AUTHOR [+2]

Abstract

A new design for an FET in which the gate oxide and gate electrodes are formed within a trench between the source and drain regions is described. This structure, as seen in the figure, eliminates the source to drain leakage problem that is well known in the art and provides for increased switching speed and circuit density. A further advantage is the planar surface topology that facilitates the metallization and interconnection of the FETs.

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Novel Uvlsi Mos Transister Design

A new design for an FET in which the gate oxide and gate electrodes are formed within a trench between the source and drain regions is described. This structure, as seen in the figure, eliminates the source to drain leakage problem that is well known in the art and provides for increased switching speed and circuit density. A further advantage is the planar surface topology that facilitates the metallization and interconnection of the FETs.

Referring to the figure, an N-well FET is shown for illustration purposes, and this invention may be equally applicable to P-well type transistors. After formation of the N-well region 10 within substrate 12, the source and drain regions 14 and 16 are lithographically defined and implanted. The trench area 18 between the source and drain regions 14, 16 is defined using current processes for etching trenches, such as reactive ion etch, plasma etch, ion milling, etc. The surface of the trench is coated with a gate oxide 20 followed by the deposition of the gate electrode 22. The gate electrode 22 can be any material typically used for gate electrodes, such as aluminum, copper, polysilicon, etc. Subsequent processing steps for insulation and interconnection are then performed as well-known in the art.

Disclosed anonymously.

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