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Tungsten Evaporation With Ion Enhancement

IP.com Disclosure Number: IPCOM000041251D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Floro, JA: AUTHOR [+3]

Abstract

Tungsten evaporated onto thermally oxidized silicon substrates during concurrent ion bombardment produces films having a high deposition rate and low stress that minimize or eliminate oxide damage, thus masking the metal with its 4.8eV work function attractive for midgap gates.

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Tungsten Evaporation With Ion Enhancement

Tungsten evaporated onto thermally oxidized silicon substrates during concurrent ion bombardment produces films having a high deposition rate and low stress that minimize or eliminate oxide damage, thus masking the metal with its 4.8eV work function attractive for midgap gates.

Referring to the figure, silicon substrate 1 maintained at 450oC is mounted on holder 2 in evaporation chamber 3 behind rotatable shutter 4 and ion probe 5. Tungsten is evaporated onto the substrate from its source in crucible 6 heated by an electron beam. Argon gas is supplied via inlet 7 to ion source 8 directed at the substrate during evaporation. This arrangement permits independent control of ion source 8.

Disclosed anonymously.

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