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LOW TEMPERATURE PROCESS FOR Al-Cu-Si DEPOSITION

IP.com Disclosure Number: IPCOM000041271D
Original Publication Date: 1984-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Martin, HJ: AUTHOR [+2]

Abstract

The ability to use low temperatures during deposition of Al-Cu-Si is precluded by present structures; the use of the proposed structure and process also eliminates the use of the lift-off process for pattern generation. At 200ŒC the lift-off structure deteriorates and outgases, causing contamination to the deposited films, and makes lift-off virtually impossible. The low temperature processes with the present structure does not drive the Si film from the surface thereby creating an SiO2 film when exposed to air as well as not forming the desired saturated solid solution of Al-Cu-Si which is achieved at the higher temperature. The use of the sandwiched Si structure (Figs. 1 and 2) allows for the use of a reduced process temperature without impacting the final film position or via resistance.

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LOW TEMPERATURE PROCESS FOR Al-Cu-Si DEPOSITION

The ability to use low temperatures during deposition of Al-Cu-Si is precluded by present structures; the use of the proposed structure and process also eliminates the use of the lift-off process for pattern generation. At 200OEC the lift- off structure deteriorates and outgases, causing contamination to the deposited films, and makes lift-off virtually impossible. The low temperature processes with the present structure does not drive the Si film from the surface thereby creating an SiO2 film when exposed to air as well as not forming the desired saturated solid solution of Al-Cu-Si which is achieved at the higher temperature. The use of the sandwiched Si structure (Figs. 1 and 2) allows for the use of a reduced process temperature without impacting the final film position or via resistance. These changes also provide better utilization of the process equipment as well as flexibility in the selection of the pattern generator process sub-etch or lift-off.

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