Browse Prior Art Database

Silicide Stack With Improved Adhesion Properties

IP.com Disclosure Number: IPCOM000041430D
Original Publication Date: 1984-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Hallock, D: AUTHOR [+3]

Abstract

This article describes a technique for improving the adhesion of silicide structures to underlying polysilicon layers. It involves depositing a very thin layer of "new" silicon on the polysilicon layer just prior to the deposition of the silicide layer. Silicide layers are often used in conjunction with polysilicon layers to form composite structures known as "polycides". Polycides have been favored for many gate electrode and interconnect wiring applications for having the low resistivity advantages of the silicides and the abilities of the polysilicon to form a silicon dioxidepolysilicon interface which is needed for many gate structure applications.

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Silicide Stack With Improved Adhesion Properties

This article describes a technique for improving the adhesion of silicide structures to underlying polysilicon layers. It involves depositing a very thin layer of "new" silicon on the polysilicon layer just prior to the deposition of the silicide layer. Silicide layers are often used in conjunction with polysilicon layers to form composite structures known as "polycides". Polycides have been favored for many gate electrode and interconnect wiring applications for having the low resistivity advantages of the silicides and the abilities of the polysilicon to form a silicon dioxidepolysilicon interface which is needed for many gate structure applications. One of the major limitations of polycide structures is the separation of the silicide from the polysilicon layer which often results during hot processing steps, such as during high temperature annealing or during oxidation. This adhesion problem can be substantially eliminated by evaporating onto the polysilicon layer a very thin layer of pure silicon which is new, not contaminated and can, for example, be evaporated just prior to the evaporation of the silicide layer, preferably using the same system during the same "pump-down" in the evaporator. This assures that the silicide layer will be deposited on a fresh, clean silicon surface which has no contaminants or oxidation. Silicide evaporated on such a surface adheres to the silicon layer much better and can withst...