Browse Prior Art Database

Contacting Method

IP.com Disclosure Number: IPCOM000041554D
Original Publication Date: 1984-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Riseman, J: AUTHOR

Abstract

During the course of electrically contacting semiconductor areas or in making vias, a hole is opened in the insulation to either the semiconductor or to a metallurgy which, in turn, electrically contacts the semiconductor. Vertical walls are generated with a reactive ion etching step. In field-effect transistor technology contouring of such edges is effected by using high P doped phosphosilicate glass and heating to 1000ŒC or higher to obtain some flow and thereby rounding the sharp edges. The present process shows how such electrical contacting can be effected without the use of high-phosphorus phosphosilicate glass and high temperature heating. The Fig. 1 structure shows a P type semiconductor body 10 having an N type region 11 formed in one surface thereof.

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Contacting Method

During the course of electrically contacting semiconductor areas or in making vias, a hole is opened in the insulation to either the semiconductor or to a metallurgy which, in turn, electrically contacts the semiconductor. Vertical walls are generated with a reactive ion etching step. In field-effect transistor technology contouring of such edges is effected by using high P doped phosphosilicate glass and heating to 1000OEC or higher to obtain some flow and thereby rounding the sharp edges. The present process shows how such electrical contacting can be effected without the use of high-phosphorus phosphosilicate glass and high temperature heating. The Fig. 1 structure shows a P type semiconductor body 10 having an N type region 11 formed in one surface thereof. Insulator layer 12, which may be composed of silicon dioxide, covers the silicon structure's 11 surface. A contact hole is opened in the layer 12 by reactive ion etching of silicon dioxide layer 12, and aluminum layer 14 is deposited by sputtering or chemical vapor deposition methods that give essentially conformal coatings. The aluminum layer is reactive ion etched to form an aluminum sidewall. The corners of the aluminum layer 14 have now been rounded. The rounding depends on the thickness of the aluminum layer 14 to the thickness of the insulator layer 12. Prior to the aluminum conformal coating step, more insulator could have been added or phosphosilicate glass could have been used an...