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Method for Removing Mobile Charges From Insulators

IP.com Disclosure Number: IPCOM000041666D
Original Publication Date: 1984-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Pak, MS: AUTHOR [+2]

Abstract

Mobile charges are undesirable both in field-effect transistors and bipolar devices since they introduce instabilities and sometimes failures in the device performance. Special and costly precleans are used to clean the surfaces of the semiconductor work pieces and special precautions and corrosive chemicals, for example, chlorine, are used to clean quartzware and maintain clean conditions during the oxidation of the semiconductor workpiece. Once cleaned, the workpiece is easily again contaminated from its environment, and, therefore, the cleaned surfaces must be immediately capped or stored in a specially clean environment, for example, a nitrogen-purged dry box. The present method cleans the contaminated surfaces initially contaminated or recontaminated during the semiconductor processing.

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Method for Removing Mobile Charges From Insulators

Mobile charges are undesirable both in field-effect transistors and bipolar devices since they introduce instabilities and sometimes failures in the device performance. Special and costly precleans are used to clean the surfaces of the semiconductor work pieces and special precautions and corrosive chemicals, for example, chlorine, are used to clean quartzware and maintain clean conditions during the oxidation of the semiconductor workpiece. Once cleaned, the workpiece is easily again contaminated from its environment, and, therefore, the cleaned surfaces must be immediately capped or stored in a specially clean environment, for example, a nitrogen-purged dry box. The present method cleans the contaminated surfaces initially contaminated or recontaminated during the semiconductor processing. Starting with a dielectric surface 10, for example, silicon dioxide, contaminated with mobile charges in the dielectric, as seen in Fig. 1, deposit N2 plasma particles of a charge opposite to the charge-bearing contaminant, as seen in Fig. 2. The plasma-charged sample is now heated to impart sufficient mobility to the contaminants to move them to the plasma- charged surface, as shown by Fig. 3. Lastly, the thin charged layer containing the undesirable contaminants is etched away to produce the clean dielectric layer of Fig. 4. At this point the sample surface may be capped, for example, with silicon nitride, or stored in a cl...