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Gold Mask for X-Ray and E-Beam Exposure Masks

IP.com Disclosure Number: IPCOM000041740D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gegenwarth, RE: AUTHOR

Abstract

Producing a mask of continuous-coverage gold at a thickness (N60 ˜ (N60 A) thinner than normally required for continuity, by depositing directly on the substrate using cluster ion evaporation techniques, save gold and eliminates the need for an adhesion layer. The present method for making masks for E-beam exposure and for X-ray exposure involves patterning of a gold layer on a thin membrane of MYLAR* or silicon. The gold is deposited using convention E-gun evaporation. Since gold does not adhere well, it is necessary first to deposit a layer of chromium. Also, since gold does not form a continuous layer until it reaches a thickness of 120 or so, it is necessary to deposit more than is needed to serve as a mask.

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Gold Mask for X-Ray and E-Beam Exposure Masks

Producing a mask of continuous-coverage gold at a thickness (N60 ~ (N60 A) thinner than normally required for continuity, by depositing directly on the substrate using cluster ion evaporation techniques, save gold and eliminates the need for an adhesion layer. The present method for making masks for E-beam exposure and for X-ray exposure involves patterning of a gold layer on a thin membrane of MYLAR* or silicon. The gold is deposited using convention E-gun evaporation. Since gold does not adhere well, it is necessary first to deposit a layer of chromium. Also, since gold does not form a continuous layer until it reaches a thickness of 120 or so, it is necessary to deposit more than is needed to serve as a mask. A cluster ion evaporation technique may be used to deposit a much thinner layer (N60 ~) to achieve a continuous plating seed layer, thereby saving material and reducing X-ray absorption. Moreover, since the adhesion is very much improved using a cluster ion technique, the gold may be deposited directly onto the substrate without a chromium or tantalum adhesion layer. * Trademark of E.I. du Pont de Nemours & Co.

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