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Laser-Reworked Polymer Photoresist Mask

IP.com Disclosure Number: IPCOM000041820D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Creedon, EP: AUTHOR

Abstract

After a metallized substrate is personalized (first personalization) etching (first etch) through a polymer photoresist mask, the residual resist is selectively removed by a laser through a metal mask with a predetermined pattern and the underlining exposed metal is etched (second etch through the laser-formed openings of the resist. This system eliminates the need for stripping the residual photoresist after the first personalization and applying another photo-resist blanket layer and attendant photolithographics to fabricate the etchant mask for the second etch, as is done in another known system.

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Laser-Reworked Polymer Photoresist Mask

After a metallized substrate is personalized (first personalization) etching (first etch) through a polymer photoresist mask, the residual resist is selectively removed by a laser through a metal mask with a predetermined pattern and the underlining exposed metal is etched (second etch through the laser-formed openings of the resist. This system eliminates the need for stripping the residual photoresist after the first personalization and applying another photo-resist blanket layer and attendant photolithographics to fabricate the etchant mask for the second etch, as is done in another known system. In one application, blanket layers of Cr-Cu-Cr are personalized (first personalization) by etching the undesired top Cr and Cu through the resist mask, and after removing the undesired residual resist by the laser through a metal mask with a pad and donut pattern, the second etch etches the exposed bottom chrome on the substrate and the exposed top chrome on the pads and donuts.

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