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Browse Prior Art Database

Ion Implantation Process for a Low Barrier Schottky Barrier Diode Products

IP.com Disclosure Number: IPCOM000041824D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 2 page(s) / 79K

Publishing Venue

IBM

Related People

Gartner, HM: AUTHOR [+4]

Abstract

Reliability of bipolar semiconductor devices used in conjunction with low barrier and high barrier Schottky barrier diodes can be increased by the use of the following process. The conventional bipolar process is utilized to form the Fig. 1 structure which includes N+ subcollector region 10 and N- epitaxial layer 12. Regions of the monocrystalline silicon in the N- epitaxial region 12 are isolated from one another by silicon dioxide recessed oxide regions 14 and recessed oxide isolation regions 16. Region 16 isolates the emitter base region of the bipolar device from its collector region. The silicon dioxide layer 17 is formed over the surface of the structure and is followed by the formation of a silicon nitride layer over the silicon dioxide layer 17. A resist layer 20 is formed thereover.

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Ion Implantation Process for a Low Barrier Schottky Barrier Diode Products

Reliability of bipolar semiconductor devices used in conjunction with low barrier and high barrier Schottky barrier diodes can be increased by the use of the following process. The conventional bipolar process is utilized to form the Fig. 1 structure which includes N+ subcollector region 10 and N- epitaxial layer 12. Regions of the monocrystalline silicon in the N- epitaxial region 12 are isolated from one another by silicon dioxide recessed oxide regions 14 and recessed oxide isolation regions 16. Region 16 isolates the emitter base region of the bipolar device from its collector region. The silicon dioxide layer 17 is formed over the surface of the structure and is followed by the formation of a silicon nitride layer over the silicon dioxide layer 17. A resist layer 20 is formed thereover. Regions designated to be the emitter (E), base (B), collector (C), high barrier Schottky barrier diode (AH) and low barrier Schottky barrier diode (AL) are opened in silicon nitride layer 18 with a conventional masking and etching technique. A silicon dioxide etching step is accomplished to open the silicon dioxide layer down to the monocrystalline silicon-designated emitter an base contact region, defined in photoresist 20, using a blockout mask. The low barrier Schottky barrier diode anode is blocked from any etching by the resist layer 20, as seen in Fig. 1. It should be noted that the resist layer 20 is present between the emitter and base regions to protect the silicon nitride layer 18 thereunder. This insures enhanced product line reliability by eliminating the exposure of any pinholes in the silicon nitride to the chemical silicon dioxide etch. The resist mask 20 is removed by conventional...