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Process for Making Self-Aligned Doped Regions for Storage Structures

IP.com Disclosure Number: IPCOM000041859D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Dash, S: AUTHOR [+2]

Abstract

The process described below makes it possible to fabricate shallow doped regions which are self-aligned to the electrode of a storage structure. The following process steps are described in conjunction with Figs. 1 and 2. 1. Form a dielectric layer 14 on a substrate 10. 2. Use low-energy ion implantation to form a shallow doped region 12 on a surface layer of the substrate 10. 3. Form an electrode structure 16 on the dielectric layer 14. 4. Use a low-temperature plasma oxidation step to consume (convert into oxide) a surface layer of he substrate which is not protected by the electrode structure, and form an oxide layer 18. Depending on the choice of electrode material, the thickness of this oxide layer over the electrode may differ from its thickness over the substrate.

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Process for Making Self-Aligned Doped Regions for Storage Structures

The process described below makes it possible to fabricate shallow doped regions which are self-aligned to the electrode of a storage structure. The following process steps are described in conjunction with Figs. 1 and 2. 1. Form a dielectric layer 14 on a substrate 10. 2. Use low-energy ion implantation to form a shallow doped region 12 on a surface layer of the substrate 10. 3. Form an electrode structure 16 on the dielectric layer 14. 4. Use a low-temperature plasma oxidation step to consume (convert into oxide) a surface layer of he substrate which is not protected by the electrode structure, and form an oxide layer 18. Depending on the choice of electrode material, the thickness of this oxide layer over the electrode may differ from its thickness over the substrate. Following the plasma oxidation step and the conversion of the exposed doped surface layer of the substrate, the only remaining doped region in the surface layer of the substrate is the region 12a which is covered by the electrode structure 16. This shallow doped region underneath the electrode structure will be self-aligned to the electrode.

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