Browse Prior Art Database

100% Solventless-Polyimide Submicron Technology

IP.com Disclosure Number: IPCOM000041869D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Duran, J: AUTHOR [+4]

Abstract

The following is a 100% dry process of polyimide submicron pattern fabrication which is completely free from any use of solvents and wet developers. In the process ion-beam-assisted etch barrier deposition and subsequent oxygen RIE (reactive ion etch) pattern developments are applied to polyimide pattern fabrication. Polyamic acid film is first vapor deposited on a substrate, such as Si. It is then baked in air, for example, at 250ŒC for 30 minutes, to convert the film to polyimide. A thin etch barrier layer is then deposited on the polyimide film from monomer vapors of tetravinylsilane exposed to a hydrogen ion beam. Oxygen reactive ion etching is then used for polyimide pattern development.

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100% Solventless-Polyimide Submicron Technology

The following is a 100% dry process of polyimide submicron pattern fabrication which is completely free from any use of solvents and wet developers. In the process ion-beam-assisted etch barrier deposition and subsequent oxygen RIE (reactive ion etch) pattern developments are applied to polyimide pattern fabrication. Polyamic acid film is first vapor deposited on a substrate, such as Si. It is then baked in air, for example, at 250OEC for 30 minutes, to convert the film to polyimide. A thin etch barrier layer is then deposited on the polyimide film from monomer vapors of tetravinylsilane exposed to a hydrogen ion beam. Oxygen reactive ion etching is then used for polyimide pattern development.

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