Browse Prior Art Database

Silicide Stiffened SFET Source/Drains

IP.com Disclosure Number: IPCOM000041907D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Roberts, S: AUTHOR [+2]

Abstract

This article describes a process for forming self-aligned silicide field-effect transistor (SFET) structures which are compatible with the use of gate structures including a silicon dioxide - silicon nitride combination. A metal-rich silicide may be used to reduce the junction silicon consumption during oxidation and formation of the self-aligned silicides. It includes the following steps: a. Forming a silicon dioxide layer on a silicon substrate. b.

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Silicide Stiffened SFET Source/Drains

This article describes a process for forming self-aligned silicide field-effect transistor (SFET) structures which are compatible with the use of gate structures including a silicon dioxide - silicon nitride combination. A metal-rich silicide may be used to reduce the junction silicon consumption during oxidation and formation of the self-aligned silicides. It includes the following steps: a. Forming a silicon dioxide layer on a silicon substrate. b.

Depositing a silicon nitride layer on the silicon dioxide layer. c. Forming a photoresist mask on the silicon dioxide layer defining a gate region and exposing source and drain regions. d. Forming through implantation source/drain regions self-aligned to the gate masking member. Removing the silicon nitride layer through etching from all areas not protected by the photoresist mask. e. Removing the photoresist layer form the gate area. (For CMOS devices repeat a, b, c, d and e steps for the second channel device.) f. Removing the silicon dioxide from the areas not covered by the gate nitride layer.
g. Depositing a blanket layer of 200 ~ to 250 ~ of cobalt (Co) over the structure. h. Annealing at about 700OEC for about one hour in an inert environment (i.e., in N2, Ar, He, H2, etc.) so that the Co will react with Si to form a cobalt disilicide (CoSi2) layer. Co will not react with Si3N4 . i. Removing, through selective etching, the Co layer from the top of the Si3N4 layer with a ho...