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Accelerated Electron Transistor

IP.com Disclosure Number: IPCOM000041928D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Dumke, WP: AUTHOR

Abstract

A three-terminal device is provided in which the "collector" current is determined by inducing an electron current of hot carriers such that these carriers are able to flow over an energy barrier and into an external circuit. The device is pictured in Fig. 1. The electrodes are labeled source (S), accelerator (A) and collector (C). The channel layer 2 is enclosed on both sides by epitaxial layers 1 and 3 having higher bandgaps than 2. The donor dopants in layer 1 and, to a lesser extent, layer 3, provide the carriers in layer 2 by the conductivity modulation effect. Layers 1 and 3 confine the unheated electrons to layer 2.

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Accelerated Electron Transistor

A three-terminal device is provided in which the "collector" current is determined by inducing an electron current of hot carriers such that these carriers are able to flow over an energy barrier and into an external circuit. The device is pictured in Fig. 1. The electrodes are labeled source (S), accelerator (A) and collector (C). The channel layer 2 is enclosed on both sides by epitaxial layers 1 and 3 having higher bandgaps than 2. The donor dopants in layer 1 and, to a lesser extent, layer 3, provide the carriers in layer 2 by the conductivity modulation effect. Layers 1 and 3 confine the unheated electrons to layer 2. The structure could be fabricated in the III-V semiconductor alloys with, for example, GaAs as the collector (region 4) and also as layer 2 and Gal-xAlxAs with different values of x (composition) as the barrier layers 1 and 3. Because of the high mobility of electrons in GaAs, particularly with the low concentration of impurities in layer 2, the electron would heat up at relatively low electric fields, roughly 5000 v/cm. With this electric field over a potential difference of 0.3-0.5 volt the electron distribution would be heated to an energy greater than the energy of the barrier formed by layer 3 if the x of the composition of layer 3 were less than 0.25. Layer 1 would have a higher barrier to exclude electrons from it. Under the correct conditions of potential on the accelerator and collector contacts, the maj...