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Measurement of Plasma Uniformity

IP.com Disclosure Number: IPCOM000042044D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Poweleit, HR: AUTHOR [+2]

Abstract

During manufacture of multilayer ceramic substrates, organic contaminants build up on the surface thereof. These contaminants are typically removed in a plasma asher. Disclosed herein is a technique for measuring plasma uniformity within the asher so that it may be assured that contaminants are removed without oxidizing nickel or gold plating on the substrate. The technique employs placement of silicon wafers having a premeasured thickness of a photoresist thereon at multilayer ceramic substrate locations within the asher. Photoresist removal at the various locations is measured, in order to track the strength and location of the plasma within the ashing chamber.

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Measurement of Plasma Uniformity

During manufacture of multilayer ceramic substrates, organic contaminants build up on the surface thereof. These contaminants are typically removed in a plasma asher. Disclosed herein is a technique for measuring plasma uniformity within the asher so that it may be assured that contaminants are removed without oxidizing nickel or gold plating on the substrate. The technique employs placement of silicon wafers having a premeasured thickness of a photoresist thereon at multilayer ceramic substrate locations within the asher. Photoresist removal at the various locations is measured, in order to track the strength and location of the plasma within the ashing chamber.

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