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Silane Polymer Excimer Laser Photoresist

IP.com Disclosure Number: IPCOM000042115D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Hofer, DC: AUTHOR [+3]

Abstract

Films 1/4 um thick of polysilane 1 and polysilane 2 were exposed with a Lambda-Physik Model EMG102 XeC1 laser at 308 nm. Peak power was measured with a Gen-Tec energy meter. Initial exposures were at 500 mj/cm , and a contact print using a Si mask showed patterns visible by eye in both polymers. Tally Step measurement demonstrated that these patterns were 1500 A deep as a result of the self-development during the laser exposure. This is the first Si polymer resist which self-develops during excimer laser exposure. These patterns were further developed with 50/50 isopropyl alcohol (IPA)/THF to produce imaged l/4 um thick films. Next, exposures were conducted at a total dose of 100 mj/cm and less self-developed pattern depth was observed. However, the patterns still developed cleanly in 50/50 IPA/THF to produce images.

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Silane Polymer Excimer Laser Photoresist

Films 1/4 um thick of polysilane 1 and polysilane 2 were exposed with a Lambda-Physik Model EMG102 XeC1 laser at 308 nm. Peak power was measured with a Gen-Tec energy meter. Initial exposures were at 500 mj/cm , and a contact print using a Si mask showed patterns visible by eye in both polymers. Tally Step measurement demonstrated that these patterns were 1500 A deep as a result of the self-development during the laser exposure. This is the first Si polymer resist which self-develops during excimer laser exposure. These patterns were further developed with 50/50 isopropyl alcohol (IPA)/THF to produce imaged l/4 um thick films. Next, exposures were conducted at a total dose of 100 mj/cm and less self-developed pattern depth was observed. However, the patterns still developed cleanly in 50/50 IPA/THF to produce images. Since these patterns could not be produced with a conventional UV Xe- Hg lamp exposure at this dose, the increased sensitivity apparently is a function of the high peak light flux from the excimer laser that results in greater photodecomposition of the Si polymer. This is clearly a case which the potentially super excited states of resist molecules induced by excimer laser exposure lead to more desirable photochemistry.

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