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Germanium/Silicon High Mobility Transistor

IP.com Disclosure Number: IPCOM000042164D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Keyes, RW: AUTHOR

Abstract

A high electron mobility transistor (HEMT) is constructed by growing an epitaxial layer of germanium which serves as a channel in a field-effect transistor (FET) on an undoped layer on an n-silicon substrate which serves as a gate. The structure is as shown in Fig. 1. The n-silicon gate is contacted by deep ion implantation, alloying or diffusion. The undoped Si can be epitaxially grown as pure Si or converted from low p-type doping by neutron transmutation. The energy diagram across the GeSi interface is shown in Fig. 2.

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Germanium/Silicon High Mobility Transistor

A high electron mobility transistor (HEMT) is constructed by growing an epitaxial layer of germanium which serves as a channel in a field-effect transistor (FET) on an undoped layer on an n-silicon substrate which serves as a gate. The structure is as shown in Fig. 1. The n-silicon gate is contacted by deep ion implantation, alloying or diffusion. The undoped Si can be epitaxially grown as pure Si or converted from low p-type doping by neutron transmutation. The energy diagram across the GeSi interface is shown in Fig. 2.

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