Browse Prior Art Database

LOW-TEMPERATURE FORMATION OF SiO2 ON METAL LINES

IP.com Disclosure Number: IPCOM000042179D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chang, CA: AUTHOR

Abstract

An SiO2 layer N 1000 is formed for use as an insulating layer between a gold contact line and additional metal or silicide contact lines employed in multi-level contacts in Si integrated circuits. The SiO2 layer is formed at a temperature N 250C as follows. Gold films, 2500 A and 1300 A thick, are deposited on (100)Si by sputtering at a deposition rate of 920 A/min. and 50 A/min respectively. The Au/Si samples are then annealed in air at 250ŒC for 10 minutes. The Si diffuses through the Au to form an SiO2 layer. Rutherford backscattering spectra, shown in the figure, show the formation of thick SiO2 layers on the surface of gold, exceeding 1000 A for the case of higher deposition rate of gold. For comparison, the figure also shows samples using (111)Si which give less SiO2 after the same heat treatment.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

LOW-TEMPERATURE FORMATION OF SiO2 ON METAL LINES

An SiO2 layer N 1000 is formed for use as an insulating layer between a gold contact line and additional metal or silicide contact lines employed in multi-level contacts in Si integrated circuits. The SiO2 layer is formed at a temperature N 250C as follows. Gold films, 2500 A and 1300 A thick, are deposited on (100)Si by sputtering at a deposition rate of 920 A/min. and 50 A/min respectively. The Au/Si samples are then annealed in air at 250OEC for 10 minutes. The Si diffuses through the Au to form an SiO2 layer. Rutherford backscattering spectra, shown in the figure, show the formation of thick SiO2 layers on the surface of gold, exceeding 1000 A for the case of higher deposition rate of gold. For comparison, the figure also shows samples using (111)Si which give less SiO2 after the same heat treatment.

1