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Combined E-Beam and Optical Exposure of Diazo Resists

IP.com Disclosure Number: IPCOM000042182D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Daetwyler, K: AUTHOR [+3]

Abstract

Patterns suitable for lift-off processing may be written in one resist layer by consecutive E-beam and optical exposure. The virtues of E-beam writing tools (high resolution, versatile pattern exposure through computer control) and those of optical tools (high speed parallel exposure of large areas of resist) can thus be combined. The combination has a higher throughput and resolution and is more versatile than either tool alone. The use of this method with the chlorobenzene soak of diazo resists allows lift-off stencils suitable for high resolution metallization to be achieved by this means. The chlorobenzene soak produces undercut profiles in the resist, which profiles are suitable for lift-off. We use the E-beam exposure for two purposes: 1.

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Combined E-Beam and Optical Exposure of Diazo Resists

Patterns suitable for lift-off processing may be written in one resist layer by consecutive E-beam and optical exposure. The virtues of E-beam writing tools (high resolution, versatile pattern exposure through computer control) and those of optical tools (high speed parallel exposure of large areas of resist) can thus be combined. The combination has a higher throughput and resolution and is more versatile than either tool alone. The use of this method with the chlorobenzene soak of diazo resists allows lift-off stencils suitable for high resolution metallization to be achieved by this means. The chlorobenzene soak produces undercut profiles in the resist, which profiles are suitable for lift-off. We use the E-beam exposure for two purposes: 1. versatility provided by computer control to personalize different chips on a wafer, and 2. high resolution of E-beam lithography to write patterns with small dimensions. The optical exposure is used to write the parts of the patterns which are common to many chips or wafers and which do not require high resolution. The throughput of the E-beam writing machine is thereby effectively increased. To determine the exposure and development conditions, we chose to develop lines with a particular bias. Then we determined the development time needed to produce this bias for a number of different E-beam and optical exposures. We then determined the range of development times for...