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Method for EUV photoresist polymers with attached surfactant groups

IP.com Disclosure Number: IPCOM000042258D
Publication Date: 2005-Feb-03
Document File: 3 page(s) / 24K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for extreme ultraviolet (EUV) photoresist polymers with attached surfactant groups. Benefits include improved performance, improved reliability, and improved cost effectiveness.

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39159

Method for EUV photoresist polymers with attached surfactant groups

Disclosed is a method for extreme ultraviolet (EUV) photoresist polymers with attached surfactant groups. Benefits include improved performance, improved reliability, and improved cost effectiveness.

Background

      Surface affecting agents (surfactants) can be used in several ways with polymers. Surfactants improve the mixing capability (miscibility) of polymers and reduce scumming at the bottom of contact hole structures. Additionally, surfactants improve line width roughness (LWR) in some cases.

      Solutions of surfactants with polymers and surfactants in rinse solutions can have problems with the formation of particles due to the high concentrations of surfactants required to improve patterning performance. Some improvement in scumming occurs if a surfactant is added to the developer because the miscibility of the polymer is improved in the developer solution. However, additional improvement is required.

       

              Photoresist structures can collapse when the capillary forces become large during the drying step. Capillary forces are a function of the surface tension of the rinse solution with the photoresist and the contact angle of the rinse liquid on the photoresist. Surfactants are used in rinse solutions to reduce photoresist collapse because they reduce the surface tension. The problem of photoresist collapse is expected to become more severe for future lithographic technology.     

      Conventionally, the use of surfactant rinses adds significant cost.

General description

      The disclosed method is EUV polymers with attached surfactants. The surfactant improves the miscibility of the polymer during lithographic development and reduces the polymer’s surface tension. As a result, fewer defects occur, such as particles on the lithographic mask and scum at the bottom of contact holes. LWR is improved and photoresist collapse is reduced due to the lessened surface tension. 

 Advantages

              The disclosed method provides advantages, including:
•             Improved performance due to improving the miscibility of the polymer

•             Improved performance due...