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Method for 193-nm LDD photoresists

IP.com Disclosure Number: IPCOM000042263D
Publication Date: 2005-Feb-03
Document File: 2 page(s) / 46K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for 193-nm low density defect (LDD) photoresists. Benefits include improved functionality, improved performance, and improved reliability

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Method for 193-nm LDD photoresists

Disclosed is a method for 193-nm low density defect (LDD) photoresists. Benefits include improved functionality, improved performance, and improved reliability.

Background

      The conventional technique for removing post-patterned and developed resist materials is to use an aqueous developer and rinse. Post-developed 193-nm resists resins have limited solubility in water and are primarily removed by the physical washing process. The result is a deposition of developed polymer (polymer residues) and/or materials on top of the wafers that the block pattern and impact die yield. These deposited residues are very difficult to remove and cannot be successfully removed by extensive rinsing or rinse modulations. This issue is expected to have an increasingly significant impact as the critical dimensions become smaller with future technologies.

      Alternate resist formulations and resist specific post-pattern developing and rinse solutions are conventionally used to solve the problem. However, this solution is not optimal due to the limited space available on a single piece of processing equipment and the requirement to use multiple resists.

      After exposure and baking, most conventional 193-nm resist resins have deblocking groups that are hydrophobic and do not dissolve in an aqueous developer and rinse. As a result, the deblocking groups are expected to remain in the film and cause particle and scum defects as the critical dimensions become smaller (see Figure 1).

General description

      The disclosed method is 193-nm photoresists with developer-soluble protecting groups after exposure. The method can be extended to other wavelength lithography, such as deep ultraviolet and extreme ultraviolet.

              The key elements...