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Browse Prior Art Database

Plasmon Inhibiting Hot Electron Transistor

IP.com Disclosure Number: IPCOM000042289D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dumke, WP: AUTHOR [+3]

Abstract

In ballistic or hot electron transistors an improvement is provided in the form of a structure wherein the energy conditions are such that the plasmon energy Ep plus the Fermi energy Ef is greater than the electron injection energy. The device is constructed using materials such as tin for doping and GaAlAs for the barriers. A structure and energy diagram is shown in the figure.

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Plasmon Inhibiting Hot Electron Transistor

In ballistic or hot electron transistors an improvement is provided in the form of a structure wherein the energy conditions are such that the plasmon energy Ep plus the Fermi energy Ef is greater than the electron injection energy. The device is constructed using materials such as tin for doping and GaAlAs for the barriers. A structure and energy diagram is shown in the figure.

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