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Improved Coating Procedure for Silicon Carbide on Graphite Susceptors Used for Silicon Nitride Deposition

IP.com Disclosure Number: IPCOM000042301D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Badami, AV: AUTHOR [+4]

Abstract

The present procedure eliminates flaking on susceptors which in turn eliminates contamination of silicon nitride films being grown. The result is a better quality silicon nitride film. Silicon nitride (Si3N4) films are used extensively in the fabrication of VLSI bipolar devices due to their effectiveness as a diffusion barrier and an oxidation barrier, and due to their excellent passivation characteristics. One type of system used to deposit Si3N4 films is a cold walled, radiantly heated vertical epitaxial reactor, e.g., the AMC 7600 epitaxial reactor, manufactured by the Applied Materials Corp. In this system, silicon wafers sit vertically inside recessed pockets on silicon carbide-coated graphite susceptors during Si3N4 deposition.

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Improved Coating Procedure for Silicon Carbide on Graphite Susceptors Used for Silicon Nitride Deposition

The present procedure eliminates flaking on susceptors which in turn eliminates contamination of silicon nitride films being grown.

The result is a better quality silicon nitride film. Silicon nitride (Si3N4) films are used extensively in the fabrication of VLSI bipolar devices due to their effectiveness as a diffusion barrier and an oxidation barrier, and due to their excellent passivation characteristics. One type of system used to deposit Si3N4 films is a cold walled, radiantly heated vertical epitaxial reactor, e.g., the AMC 7600 epitaxial reactor, manufactured by the Applied Materials Corp. In this system, silicon wafers sit vertically inside recessed pockets on silicon carbide-coated graphite susceptors during Si3N4 deposition. Before Si3N4 films can be deposited, these susceptors must be coated with a silicon coating, which acts as a stress buffer between the silicon carbide coating on the susceptor and the Si3N4 film. In the past, a coating procedure recommended by the tool manufacturer has been used to deposit the silicon coating on the susceptor, viz: Temperature : 900^C. Gases/Flows : SiH4 (2 % in H2) - 3 1/min H2 - 120 1/min Deposition time : 40 min This process results in a 3-4 m polysilicon film on the susceptor. Experience has shown that Si3N4 films deposited on these susceptors will begin to crack and flake off the susceptor after 3 to 10 micr...