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Evaporation System With RF Clean

IP.com Disclosure Number: IPCOM000042353D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Eschbach, RJB: AUTHOR

Abstract

This article concerns an improved evaporation system having the capability to RF sputter clean and deposit metallic layers on semiconductor wafers with angles of incidence less than five degrees. This improved evaporation system is achieved by modifying existing evaporation systems in the following manner. The RF sputter clean capability is accomplished by adding RF isolated rotary feedthrough, RF control circuitry, and RF shielding in the process chamber. The low angle deposition is accomplished by increasing the radius of curvature of the wafer dome and by increasing the distance from the source to the semiconductor wafers held in the wafer dome. As shown in the figure, evaporation system 1 is divided into two sections, product/process chamber 8 and source-isolated chamber 9.

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Evaporation System With RF Clean

This article concerns an improved evaporation system having the capability to RF sputter clean and deposit metallic layers on semiconductor wafers with angles of incidence less than five degrees. This improved evaporation system is achieved by modifying existing evaporation systems in the following manner. The RF sputter clean capability is accomplished by adding RF isolated rotary feedthrough, RF control circuitry, and RF shielding in the process chamber. The low angle deposition is accomplished by increasing the radius of curvature of the wafer dome and by increasing the distance from the source to the semiconductor wafers held in the wafer dome. As shown in the figure, evaporation system 1 is divided into two sections, product/process chamber 8 and source-isolated chamber 9. High-vac valve 11 forms the boundary between product/process chamber 8 and source isolated chamber 9. Source 4 and wire feed 12 are located in the lower half of source-isolated chamber 9. The previous source position is shown in dashed lines as indicated by reference numeral 5. Heater array 6 has been moved from the source-isolated chamber 9 to the product/process chamber 8. The former heater array position is shown in dashed lines as indicated by reference numeral 7. Heater array shield 10 protects heater array 6 from debris. By placing heater array 6 and heater array shield 10 within the product/process chamber 8, the heating function may be operated inde...