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Resist Profile Tailoring Process

IP.com Disclosure Number: IPCOM000042400D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gillespie, SJ: AUTHOR

Abstract

A process for equalizing the profile of narrow and wide images, using a combination of optical and electron beam exposures. In optical lithography, intensity attenuation in resist results in narrow lines which are not fully opened by the time wider lines are fully opened. This cannot be corrected by adjusting the exposure for each line width as is typically done with electron beam lithography and it results in an image with adjacent regions having different profile characteristics. The presently proposed solution achieves profile equalization by first using optical lithography to form a pattern and then using a direct write electron beam exposure to improve the profile of the narrowest lines. The electron beam dose is kept low enough so that profile equalization can take place between narrow and wide lines.

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Resist Profile Tailoring Process

A process for equalizing the profile of narrow and wide images, using a combination of optical and electron beam exposures. In optical lithography, intensity attenuation in resist results in narrow lines which are not fully opened by the time wider lines are fully opened. This cannot be corrected by adjusting the exposure for each line width as is typically done with electron beam lithography and it results in an image with adjacent regions having different profile characteristics. The presently proposed solution achieves profile equalization by first using optical lithography to form a pattern and then using a direct write electron beam exposure to improve the profile of the narrowest lines. The electron beam dose is kept low enough so that profile equalization can take place between narrow and wide lines. The resist is selected to be sensitive to both optical and E-beam exposure. A normal optical exposure can be done as a first pass on patterns having linewidths ranging down to micron and submicron dimensions. A second pass exposure can be arranged on only the narrowest images with an electron beam. This additional exposure will provide a sufficient boost to equalize the profiles of the image without causing any proximity effects resulting from the backscattering of electrons.

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