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LOW PRESSURE PLASMA ETCH PROCESS FOR Nb2O5/Nb COMPOSITE FILMS

IP.com Disclosure Number: IPCOM000042401D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chen, MM: AUTHOR [+3]

Abstract

Using a low pressure (100 mm) plasma etch process achieves a 45Πtapered edge (desirable for Josephson edge junctions) while effectively reducing the etch bias from about 1 mm per line to less than 0.1 mm per line. This disclosure makes it possible to fabricate VLSI Josephson circuits with improvements in circuit density without any other changes in the technology. The low etch bias can be achieved over a wide range of oxygen concentration, cathode spacing, gas flow, and power density, providing that the pressure is below 100 mm. After photoresist and plasma etch processing the line-to-space ratio remains essentially unchanged. Detailed measurements show an etch bias of less than 0.1 mm.

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LOW PRESSURE PLASMA ETCH PROCESS FOR Nb2O5/Nb COMPOSITE FILMS

Using a low pressure (100 mm) plasma etch process achieves a 45OE tapered edge (desirable for Josephson edge junctions) while effectively reducing the etch bias from about 1 mm per line to less than 0.1 mm per line. This disclosure makes it possible to fabricate VLSI Josephson circuits with improvements in circuit density without any other changes in the technology. The low etch bias can be achieved over a wide range of oxygen concentration, cathode spacing, gas flow, and power density, providing that the pressure is below 100 mm. After photoresist and plasma etch processing the line-to-space ratio remains essentially unchanged. Detailed measurements show an etch bias of less than
0.1 mm.

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