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Novel Solvent System for the Removal of Hardened Photoresists

IP.com Disclosure Number: IPCOM000042429D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Linde, H: AUTHOR [+3]

Abstract

Plasma-hardened, baked, positive photoresist structures have been proposed for producing undistorted masking in a variety of photolithographic applications, since such hardened photoresists improve resolution of metal lines at the higher temperatures required during metal deposition. However, although these resist structures provide improved flow resistance, they are not readily removed by conventional methods and solvents. This article teaches a formulation and use of a unique solvent system that easily removes such thermally and/or plasma-hardened photoresists from a substrate. It consists of soaking the hardened photoresist-coated substrate in a solution of pyridine and dimethyl sulfoxide in a ratio of 10 to 1:2 (pyridine:dimethyl sulfoxide).

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Novel Solvent System for the Removal of Hardened Photoresists

Plasma-hardened, baked, positive photoresist structures have been proposed for producing undistorted masking in a variety of photolithographic applications, since such hardened photoresists improve resolution of metal lines at the higher temperatures required during metal deposition. However, although these resist structures provide improved flow resistance, they are not readily removed by conventional methods and solvents. This article teaches a formulation and use of a unique solvent system that easily removes such thermally and/or plasma- hardened photoresists from a substrate. It consists of soaking the hardened photoresist-coated substrate in a solution of pyridine and dimethyl sulfoxide in a ratio of 10 to 1:2 (pyridine:dimethyl sulfoxide). Photoresist plasmatized and baked at a temperature in excess of 170OEC for 45 minutes was not removable with standard hot (85OE) conventional solvents used at the present time in the photoresist industry. However, it has been found that the same resist is entirely stripped from a silicon dioxide surface by a process involving a 5-minute soak in a 65OE solution of the pyridine dimethyl sulfoxide solution described above. It has also been found that this solvent mixture does not apparently attack the conventional aluminum copper metallurgy or cured polyimides deposited on semiconductor wafers.

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