Browse Prior Art Database

PYATS-3 ma PROCESS

IP.com Disclosure Number: IPCOM000042550D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Scrivner, C: AUTHOR [+2]

Abstract

PYATS-3 ma is a test site chip of various-width serpentine lines and spaces connected to electrical test pads. Its purpose is to detect photo defects through electrical testing. The fabrication of the device uses an N-type substrate with a P-type diffusion. Junction defects are also detected in the test/analysis process, but are censored from the data base because of no relationship to the product. The fabrication process for the PYATS-3 ma test site can be made parallel to the standard product process by using: P-type substrate, standard subcollector implant, and standard epitaxy in conjunction with the PYATS-3 ma photo process. This provides relevance to the junction defects, as they are a result of the standard product process.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

PYATS-3 ma PROCESS

PYATS-3 ma is a test site chip of various-width serpentine lines and spaces connected to electrical test pads. Its purpose is to detect photo defects through electrical testing. The fabrication of the device uses an N-type substrate with a P-type diffusion. Junction defects are also detected in the test/analysis process, but are censored from the data base because of no relationship to the product. The fabrication process for the PYATS-3 ma test site can be made parallel to the standard product process by using: P-type substrate, standard subcollector implant, and standard epitaxy in conjunction with the PYATS-3 ma photo process. This provides relevance to the junction defects, as they are a result of the standard product process. This allows for electrical testing of both photo defects and hot process defects in a single test site.

1