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Electrostatic Dust Collection in a Photolithographic Mask Projection Tool

IP.com Disclosure Number: IPCOM000042560D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fredericks, EC: AUTHOR [+4]

Abstract

Dust particles which accumulate on a photolithographic mask can interfere with accurate replication of the mask image on a semiconductor wafer. A technique is disclosed herein for sweeping out dust particles from the vicinity of the mask in a photolithographic exposure tool. The technique consists of inserting a silicon wafer having solar cells thereon into the mask receptacle of the photolithographic masking tool and exposing the surface of the silicon wafer to the ultraviolet light source within the tool. By action of the photoelectric effect, a net electrostatic charge will accumulate on the silicon wafer so exposed, which will attract dust particles in the vicinity of the mask receptacle.

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Electrostatic Dust Collection in a Photolithographic Mask Projection Tool

Dust particles which accumulate on a photolithographic mask can interfere with accurate replication of the mask image on a semiconductor wafer. A technique is disclosed herein for sweeping out dust particles from the vicinity of the mask in a photolithographic exposure tool. The technique consists of inserting a silicon wafer having solar cells thereon into the mask receptacle of the photolithographic masking tool and exposing the surface of the silicon wafer to the ultraviolet light source within the tool. By action of the photoelectric effect, a net electrostatic charge will accumulate on the silicon wafer so exposed, which will attract dust particles in the vicinity of the mask receptacle. After a period of time, the charged wafer, with dust particles accumulated thereon, can be removed from the mask receptacle and the conventional photolithographic mask may then be inserted into the receptacle. Thereafter, conventional exposure steps can be taken. As a result of this technique, a significant reduction in the particulate contaminate level in the vicinity of the mask can be accomplished.

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