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Method for Improved Adhesion for Resist Films

IP.com Disclosure Number: IPCOM000042600D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Collini, GJ: AUTHOR [+5]

Abstract

Resist materials (such as base soluble novolak resin and naphthoquinone-(1,2)-diazide sulfonic acid ester sensitizer mixture) often exhibit poor adhesion and wettability. The poor adhesion is characterized by floating images or, more dramatically, by complete pattern resist film lift-off. While poor wettability by these resist materials is usually observed during the spin coating on Si, SiO2 (thermal, doped, sputtered quartz) or silicon nitride surfaces. The poor wettability is characterized by pull-back of the resist at the wafer edge, crater formation, and, most dramatic, little or no resist film coating after spinning. The approach here describes a method for improved adhesion and good wettability.

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Method for Improved Adhesion for Resist Films

Resist materials (such as base soluble novolak resin and naphthoquinone-(1,2)- diazide sulfonic acid ester sensitizer mixture) often exhibit poor adhesion and wettability. The poor adhesion is characterized by floating images or, more dramatically, by complete pattern resist film lift-off. While poor wettability by these resist materials is usually observed during the spin coating on Si, SiO2 (thermal, doped, sputtered quartz) or silicon nitride surfaces. The poor wettability is characterized by pull-back of the resist at the wafer edge, crater formation, and, most dramatic, little or no resist film coating after spinning. The approach here describes a method for improved adhesion and good wettability. It is achieved by placing the Si, SiO2 or Si3N4 substrates in a vapor atmosphere consisting of a mixture of gama-amino propyl triethoxysilane, hexamethyldisilazane (HMDS) in FREON*. No dewetting occurs when the resist is spin coated on such pretreated substrates. In contrast, untreated control wafers exhibit edge pull-back and cratering. For those pretreated wafers, after exposing the resist through a patterned mask, the resist images (lands) remain coherent to the substrate after aqueous alkaline development. If the resist is exposed with a very low energy dose requiring longer develop times, even then the resist adhesion to the substrate is good only when the wafer surfaces were pretreated in accordance with the above...