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Novel Surfactant/Cosolvent Additives to NMP Improves Semiconductor Lift-Off Steps

IP.com Disclosure Number: IPCOM000042729D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Thayer, AL: AUTHOR

Abstract

Most of the personality processes currently use a multilayer resist (MLR) photoresist strategy and lift-off to produce metal wiring patterns on semiconductor devices. Unique requirements of the MLR processing and the metal deposition process combine to produce long cycle times for lift-off of the metallized stencil. The problem of long lift-off times on semiconductor device processing can be obviated through the addition of non-morpholine-4-oxide monohydrate, or N-methylpiperidine-N-oxide to N-methyl-2-pyrrolidinone (NMP). The use of these compounds as a solution in heated NMP results in a significant reduction in lift-off cycle time for first and second metal levels. A typical formulation of 4-methylmorpholine-4-oxide, 0.2-0.4% by weight (0.3-0.

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Novel Surfactant/Cosolvent Additives to NMP Improves Semiconductor Lift-Off Steps

Most of the personality processes currently use a multilayer resist (MLR) photoresist strategy and lift-off to produce metal wiring patterns on semiconductor devices. Unique requirements of the MLR processing and the metal deposition process combine to produce long cycle times for lift-off of the metallized stencil. The problem of long lift-off times on semiconductor device processing can be obviated through the addition of non-morpholine-4-oxide monohydrate, or N-methylpiperidine-N-oxide to N-methyl-2-pyrrolidinone (NMP). The use of these compounds as a solution in heated NMP results in a significant reduction in lift-off cycle time for first and second metal levels. A typical formulation of 4-methylmorpholine-4-oxide, 0.2-0.4% by weight (0.3-0.5 mole %), provides a 25-fold decrease in cycle time at first metal lift-off and a 5-fold decrease at second metal lift-off.

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