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Process for Making High Performance Resistors

IP.com Disclosure Number: IPCOM000042740D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 64K

Publishing Venue

IBM

Related People

Bhatia, HS: AUTHOR [+3]

Abstract

This method permits the fabrication of resistors of differing resistance values, with low capacitance, using a single mask. In this process two spaced monocrystalline P doped regions 10 are formed on a suitable semiconductor base and isolated by either recessed oxide insulation or deep trench filled SiO2 regions. In Fig. 1, the material surrounding regions 10 is a thick layer of oxide 12. About 4000 to 5000 of SiO2 or any suitable insulating material is deposited over the structure shown in Fig. 1 and a window 14 formed therein by conventional photolithographics and subtractive etching techniques. As indicated, the window contacts the regions 10 at the ends thereof. A 3000 ˜ layer of P doped polysilicon is deposited on the structure (Fig.

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Process for Making High Performance Resistors

This method permits the fabrication of resistors of differing resistance values, with low capacitance, using a single mask. In this process two spaced monocrystalline P doped regions 10 are formed on a suitable semiconductor base and isolated by either recessed oxide insulation or deep trench filled SiO2 regions. In Fig. 1, the material surrounding regions 10 is a thick layer of oxide
12. About 4000 to 5000 of SiO2 or any suitable insulating material is deposited over the structure shown in Fig. 1 and a window 14 formed therein by conventional photolithographics and subtractive etching techniques. As indicated, the window contacts the regions 10 at the ends thereof. A 3000 ~ layer of P doped polysilicon is deposited on the structure (Fig. 2) and blank reactive ion etched to form polysilicon side rails 16, as indicated in Figs. 3 and 3A. Note that side rails 16 contact the regions 10. The resistance can be tailored by the amount of reactive ion etching at this point. About 500 of thermal oxide is then grown on the surface of the structure shown in Fig. 3 followed by approximately 2000 of chemically vapor deposited oxide. Openings 18 are made through the oxide to contact areas 10 (Fig. 4). The afore-described process can be modified by making a plurality of openings 14 to provide parallel paths, as indicated in Fig.
5. Alternately, as indicated in Fig. 6, the opening 14A can be provided with a longer peripheral edge to...