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ELIMINATION OF MICROBLISTERS IN ALUMINUM METALLURGY SYSTEMS EMPLOYING A Cr-Cr203 UNDERLYING LAYER

IP.com Disclosure Number: IPCOM000042747D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Gajda, JJ: AUTHOR [+2]

Abstract

This metallurgy system comprises a device 10, an overlying dielectric layer 12, a contact opening 14, a platinum silicide layer 16 in the contact hole opening, an overlying titanium layer 18 having a thickness on the order of 1400, a Cr-Cr2O3 layer 20 with a thickness of the order of 1400, and an aluminum or aluminum-copper layer 22. Additional metallurgy layers can be deposited over layer 22 to complete the metallurgy system. It has been discovered that microblisters formed in the Cr-Cr2O3 and aluminum copper systems when no titanium layer is provided. The titanium layer prevents this formation of blisters.

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ELIMINATION OF MICROBLISTERS IN ALUMINUM METALLURGY SYSTEMS EMPLOYING A Cr-Cr203 UNDERLYING LAYER

This metallurgy system comprises a device 10, an overlying dielectric layer 12, a contact opening 14, a platinum silicide layer 16 in the contact hole opening, an overlying titanium layer 18 having a thickness on the order of 1400, a Cr-Cr2O3 layer 20 with a thickness of the order of 1400, and an aluminum or aluminum- copper layer 22. Additional metallurgy layers can be deposited over layer 22 to complete the metallurgy system. It has been discovered that microblisters formed in the Cr-Cr2O3 and aluminum copper systems when no titanium layer is provided. The titanium layer prevents this formation of blisters.

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