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Browse Prior Art Database

Reactive Ion Etching Lithography

IP.com Disclosure Number: IPCOM000042978D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hiraoka, H: AUTHOR

Abstract

By removing selectively tin and/or silicon from oxygen etch barrier layers through a projection mask with hydrogen reactive etching, and then by developing the images with oxygen reactive ion etching (RIE), polymer images with very high aspect ratio are obtained with almost any kind of polymer films in complete dry processes. Many wafers can be processed simultaneously in the same chamber. Wafer throughput is very high. Total processing time is less than 25 minutes, including one minute for oxygen etch barrier deposition, six minutes hydrogen reactive ion etching, and 17 minutes oxygen RIE, but excluding overhead time for wafer handling. Removal of tin by hydrogen ions or atoms has never previously been reported, but it has been effectively carried out in this hydrogen RIE.

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Reactive Ion Etching Lithography

By removing selectively tin and/or silicon from oxygen etch barrier layers through a projection mask with hydrogen reactive etching, and then by developing the images with oxygen reactive ion etching (RIE), polymer images with very high aspect ratio are obtained with almost any kind of polymer films in complete dry processes. Many wafers can be processed simultaneously in the same chamber. Wafer throughput is very high. Total processing time is less than 25 minutes, including one minute for oxygen etch barrier deposition, six minutes hydrogen reactive ion etching, and 17 minutes oxygen RIE, but excluding overhead time for wafer handling. Removal of tin by hydrogen ions or atoms has never previously been reported, but it has been effectively carried out in this hydrogen RIE.

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