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Browse Prior Art Database

Substrate Voltage Regulator

IP.com Disclosure Number: IPCOM000043121D
Original Publication Date: 1984-Jul-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Cassidy, B: AUTHOR [+2]

Abstract

An improved substrate voltage regulator circuit is disclosed for regulating the operation of an oscillator which powers a charge pump in a substrate voltage generator. The figure shows the regulator circuit consisting of the depletion-mode load FET device 1 which is connected with its drain to the drain voltage VDD, its gate to its source, and its source connected to the control terminal of the 5 MHz oscillator 3. A second depletion mode FET device 2 has its drain connected to the control input of the oscillator, its gate connected to the substrate of an integrated circuit chip upon which it is formed, and its source connected to ground potential.

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Substrate Voltage Regulator

An improved substrate voltage regulator circuit is disclosed for regulating the operation of an oscillator which powers a charge pump in a substrate voltage generator. The figure shows the regulator circuit consisting of the depletion-mode load FET device 1 which is connected with its drain to the drain voltage VDD, its gate to its source, and its source connected to the control terminal of the 5 MHz oscillator 3. A second depletion mode FET device 2 has its drain connected to the control input of the oscillator, its gate connected to the substrate of an integrated circuit chip upon which it is formed, and its source connected to ground potential. It is the purpose of the regulator circuit devices 1 and 2 to monitor the voltage of the substrate by means of the connection of the gate of the FET device 2 to the substrate voltage. The threshold voltage of the FET device 2 is approximately -1 volt and thus, when the substrate voltage rises above approximately -1 volt, the FET device 2 goes into its conductive state. This lowers the potential at the control node for the 5 MHz oscillator 3, thereby turning on the oscillator. The output of the 5 MHz oscillator is applied through the capacitor 4 to the cathode of the diode 6 whose node is connected to the substrate. The self-biased FET device 5, in combination with the capacitor 4 and the diode 6, serves as a charge pump in a manner similar to that which is described in U.S. Patent 4,208,595....