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IMPROVING OUTPUT CONDUCTANCE OF SHORT CHANNEL GaAs FIELD-EFFECT TRANSISTORS

IP.com Disclosure Number: IPCOM000043209D
Original Publication Date: 1984-Jul-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Tiwari, S: AUTHOR

Abstract

The output conductance of a GaAs field-effect transistor with a short channel length of the order of 0.5 micron is improved through the addition of a layer of Gal-xAlxAs, where x is of the order of 0.55 to 0.45 in the channel between the GaAs substrate and a GaAs layer under the gate. Because of reduced activation in Gal-xAlxAs most of the charge is contained in the tightly thickness-controlled GaAs layer. Thus, the thickness of GaAs and the ion implantation conditions can be controlled to produce a relatively flatter doping profile with sharper cutoff at the tail end in the Gal-xAlxAs. As a consequence, transconductance and output conductance are improved and threshold characteristics are controlled better. The structure is shown in the figure.

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IMPROVING OUTPUT CONDUCTANCE OF SHORT CHANNEL GaAs FIELD- EFFECT TRANSISTORS

The output conductance of a GaAs field-effect transistor with a short channel length of the order of 0.5 micron is improved through the addition of a layer of Gal-xAlxAs, where x is of the order of 0.55 to 0.45 in the channel between the GaAs substrate and a GaAs layer under the gate. Because of reduced activation in Gal-xAlxAs most of the charge is contained in the tightly thickness-controlled GaAs layer. Thus, the thickness of GaAs and the ion implantation conditions can be controlled to produce a relatively flatter doping profile with sharper cutoff at the tail end in the Gal-xAlxAs. As a consequence, transconductance and output conductance are improved and threshold characteristics are controlled better. The structure is shown in the figure.

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