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Sensitivity Enhancement of Sulfone-Modified Novolak Resist

IP.com Disclosure Number: IPCOM000043267D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Moreau, WM: AUTHOR

Abstract

A sulfone-modified novolak resist was formulated for the purpose of forming 5.0 mc/cm2 (1.0 mm R 1.5 mm) line resolution using a 1.3.5 Shipley AZ-2401 developer for 1.0 mm film. When developed under these conditions, no film loss occurs in the unexposed region. When exposed under a 2.5 mc/cm2 E-beam and developed with 1.3.5 AZ-2401, a 10% loss of the unexposed film occurs. By using film > 1.4 mm and a 1.5.5 AZ-2401 developer, no film thinning occurs and the image develops cleanly. The sensitivity of this resist to a 2.5 mc/cm2 E-beam dose can be extended by using thicker film and diluting developer.

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Sensitivity Enhancement of Sulfone-Modified Novolak Resist

A sulfone-modified novolak resist was formulated for the purpose of forming 5.0 mc/cm2 (1.0 mm R 1.5 mm) line resolution using a 1.3.5 Shipley AZ-2401 developer for 1.0 mm film. When developed under these conditions, no film loss occurs in the unexposed region. When exposed under a 2.5 mc/cm2 E-beam and developed with 1.3.5 AZ-2401, a 10% loss of the unexposed film occurs. By using film > 1.4 mm and a 1.5.5 AZ-2401 developer, no film thinning occurs and the image develops cleanly. The sensitivity of this resist to a 2.5 mc/cm2 E-beam dose can be extended by using thicker film and diluting developer.

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