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Pulsed Lamp Activated Chemical Etching

IP.com Disclosure Number: IPCOM000043275D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Chen, L: AUTHOR [+4]

Abstract

A pulsed lamp is an excellent light source for photon-enhanced chemical etching. It is extremely high in power, has a wide range of wave length selection, and can etch large areas with excellent resolution. For SiO2 etching, XeF2 is used as the etch gas which chemisorbs on the SiO2 surface. Deep UV excites the electronic state of SiO2 and causes a reaction on a single photon excitation. The UV lamp shown in the figure, gives good resolution. In Cu etching, Cl2 is used as the etch gas. The UV band excites the Cu surface to react with the etch gas. The etch product CuCl absorbs strongly in the UV region. CuCl can be removed by means of electronic and thermal sputtering by photons.

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Pulsed Lamp Activated Chemical Etching

A pulsed lamp is an excellent light source for photon-enhanced chemical etching. It is extremely high in power, has a wide range of wave length selection, and can etch large areas with excellent resolution. For SiO2 etching, XeF2 is used as the etch gas which chemisorbs on the SiO2 surface. Deep UV excites the electronic state of SiO2 and causes a reaction on a single photon excitation. The UV lamp shown in the figure, gives good resolution. In Cu etching, Cl2 is used as the etch gas. The UV band excites the Cu surface to react with the etch gas. The etch product CuCl absorbs strongly in the UV region. CuCl can be removed by means of electronic and thermal sputtering by photons.

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