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Fabrication of Schottky Devices on P-Type Silicon Using Ion Beam Etching

IP.com Disclosure Number: IPCOM000043277D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Auret, FD: AUTHOR [+3]

Abstract

A process has been demonstrated for fabricating good quality Schottky devices with molybdenum (Mo) metallurgy on p-type silicon. The process includes argon ion beam sputter etching the silicon surface prior to Schottky metallization. The p-type wafers were cleaned by standard chemical techniques and then sputter etched in a vacuum using a Kaufman ion source. The sputter etching voltages used in the ion source ranged from 500 to 1500 VDC with corresponding beam currents of .1 ma/cm2 to 1 ma/cm2 . Etching times were from one-half to 5 minutes. After etching, Schottky Mo metallization was immediately deposited by secondary ion beam deposition. The deposition conditions were: beam voltage 1500 VDC, beam current 2.5 ma/cm2, deposition rate .

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Fabrication of Schottky Devices on P-Type Silicon Using Ion Beam Etching

A process has been demonstrated for fabricating good quality Schottky devices with molybdenum (Mo) metallurgy on p-type silicon. The process includes argon ion beam sputter etching the silicon surface prior to Schottky metallization. The p-type wafers were cleaned by standard chemical techniques and then sputter etched in a vacuum using a Kaufman ion source. The sputter etching voltages used in the ion source ranged from 500 to 1500 VDC with corresponding beam currents of .1 ma/cm2 to 1 ma/cm2 . Etching times were from one-half to 5 minutes. After etching, Schottky Mo metallization was immediately deposited by secondary ion beam deposition. The deposition conditions were: beam voltage 1500 VDC, beam current 2.5 ma/cm2, deposition rate .9 ~/sec of Mo, metallization thickness (2700 ~) and a deposition pressure of 8 x 10-5 torr. The best devices were produced when the sputter etching voltages and currents were the highest and etching times the longest, that is, 1500 VDC at 1 ma/cm2 and 5 minutes, respectively. The following table lists device characteristics produced both with and without ion beam sputter etching. Ion Beam Reverse Leakage at Anneal in Etching Barrier Height Ideality 4^VDC^Reverse^Bias Forming^Gas No .55 V 1.08 1 x 10-5 amps None No .46 V Not Measurable 1 x 10-3 amps 400OEC/10 min Yes .648 1.106 5.5 x 10-7 amps None Yes .592 1.092 4.5 x 10-6 amps 400OEC/10 min Yes

.584 1.09 5. x...