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Electrostatic Discharge Protection Device in Deep Trench Isolation Structure

IP.com Disclosure Number: IPCOM000043316D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Cavaliere, JR: AUTHOR [+3]

Abstract

Electrostatic discharge protection is afforded bipolar semiconductor devices, which are connected to chip input pads, by provision of a discharge path which uses pre-existing p-n junctions, such as a subcollector-substrate junction and a resistor p-n junction. The technique is particularly applicable to deep isolation trench chip structures. The electrostatic discharge (ESD) protection circuit shown in Fig. 1 eliminates damage caused by destructive transient voltage applied to the primary input. The circuit comprises two diodes 1 and 2, stability resistor 3 and resistor 4, and protects against both positive and negative polarities of input voltage transients. When a positive polarity of transient voltage of magnitude .

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Electrostatic Discharge Protection Device in Deep Trench Isolation Structure

Electrostatic discharge protection is afforded bipolar semiconductor devices, which are connected to chip input pads, by provision of a discharge path which uses pre-existing p-n junctions, such as a subcollector-substrate junction and a resistor p-n junction. The technique is particularly applicable to deep isolation trench chip structures. The electrostatic discharge (ESD) protection circuit shown in Fig. 1 eliminates damage caused by destructive transient voltage applied to the primary input. The circuit comprises two diodes 1 and 2, stability resistor 3 and resistor 4, and protects against both positive and negative polarities of input voltage transients. When a positive polarity of transient voltage of magnitude .8 V greater than VCC is applied to the primary input, it reverse-biases the subcollector-substrate p-n junction 1. However, the same transient voltage forward-biases the p-n junction in the body of the stability resistor 3 to VCC, and results in current flow back to VEE through the high value resistor 4. When a negative polarity of transient voltage is applied to the input, it forward-biases the subcollector-substrate p-n junction. The current then flows toward the input pad. A cross-sectional view of chip structure is shown in Fig. 2 corresponding to the protection circuit of Fig. 1. Diode 1 of Fig. 1 is formed by P substrate 5 and N+ subcollector 6. Diode 2 of Fig. 1 corr...