Browse Prior Art Database

Doping of Gallium Arsenide With Silicon in Molecular Beam Epitaxy (Mbe)

IP.com Disclosure Number: IPCOM000043340D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR [+3]

Abstract

Very heavy doping of GaAs is very desirable for the purpose of low sheet resistance and lower resistivity ohmic contacts. Si is the most versatile used dopant in GaAs by molecular beam epitaxy due to its low amphotericity and small diffusion coefficient. As high Si diffusion cell temperature is employed, CO and N produced by the cell tend to compensate the growing material. A low Si source temperature of about 1200ŒC and a slow growth rate around 0.1 mm/h, while maintaining the As overpressure, provide a ten- fold increase in doping to an average 1.1 x 1019cm-3 .

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Doping of Gallium Arsenide With Silicon in Molecular Beam Epitaxy (Mbe)

Very heavy doping of GaAs is very desirable for the purpose of low sheet resistance and lower resistivity ohmic contacts. Si is the most versatile used dopant in GaAs by molecular beam epitaxy due to its low amphotericity and small diffusion coefficient. As high Si diffusion cell temperature is employed, CO and N produced by the cell tend to compensate the growing material. A low Si source temperature of about 1200OEC and a slow growth rate around 0.1 mm/h, while maintaining the As overpressure, provide a ten- fold increase in doping to an average 1.1 x 1019cm-3 .

1