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Browse Prior Art Database

Thick Film Copper (Screened) for Joining Electronic Packages

IP.com Disclosure Number: IPCOM000043363D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Palmateer, PH: AUTHOR [+2]

Abstract

A substrate is bonded to a plated frame by the use of thick film copper in the following bonding procedure: 1. The substrate is cleaned in three steps: a) Immersion in DI water b) Rinsed in isopropyl alcohol c) Vacuum baked for 15 minutes at 150ŒC 2. Screen approximately 0.004" of Cu paste on the bottom or pin side of the substrate 3 in an area 1, illustrated in Fig. 1. 3. Mount frame 2 on substrate 3. 4. Dry for 30 minutes at 120 C inŒair or N2 . 5. Fire at 605 C for 10 minutes in N2 . Note: O2 content must be between 3-8 PPM. After firing, the copper paste 1 bonds the substrate 3 to the frame 2 (Fig. 2).

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Thick Film Copper (Screened) for Joining Electronic Packages

A substrate is bonded to a plated frame by the use of thick film copper in the following bonding procedure: 1. The substrate is cleaned in three steps: a) Immersion in DI water

b) Rinsed in isopropyl alcohol

c) Vacuum baked for 15 minutes at 150OEC 2. Screen approximately 0.004" of Cu paste on the bottom or pin side of the substrate 3 in an

area 1, illustrated in Fig. 1. 3. Mount frame 2 on substrate 3. 4. Dry for 30 minutes at 120 C inOEair or N2 . 5.

Fire at 605 C for 10 minutes in N2 . Note: O2 content must be between 3-8 PPM. After firing, the copper paste 1 bonds the substrate 3 to the frame 2 (Fig. 2).

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