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MCP Metallurgy With In-Situ Chromium Removal

IP.com Disclosure Number: IPCOM000043510D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chao, RS: AUTHOR [+4]

Abstract

Metallized ceramic polyimide (MCP) metallurgy with in-situ chromium (Cr) removal is a method of depositing Cr selectively on a polyimide surface so that it provides for good adhesion of the second layer of metal (M-2) to polyimide while allowing the vias to be free of Cr. For reliable vias, a Cu-Cu connection is desired. For good adhesion of the second layer of metal (M-2) to polyimide, a Cr-polyimide interface is desired. To accomplish this, apply Zn to the Cu in the vias, either through immersion or electroplating, prior to the deposition of M-2. Then place the substrate in a thin film deposition system where the Cr is evaporated or sputtered.

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MCP Metallurgy With In-Situ Chromium Removal

Metallized ceramic polyimide (MCP) metallurgy with in-situ chromium (Cr) removal is a method of depositing Cr selectively on a polyimide surface so that it provides for good adhesion of the second layer of metal (M-2) to polyimide while allowing the vias to be free of Cr. For reliable vias, a Cu-Cu connection is desired. For good adhesion of the second layer of metal (M-2) to polyimide, a Cr- polyimide interface is desired. To accomplish this, apply Zn to the Cu in the vias, either through immersion or electroplating, prior to the deposition of M-2. Then place the substrate in a thin film deposition system where the Cr is evaporated or sputtered. The temperature of the substrate is then raised to over 210OEC (typically 300 - 400OEC) in high vacuum, to evaporate the Zn and disintegrate and dissipate the Cr in the vias, leaving the vias free of Cr. Cu can then be deposited to the desired thickness for M-2. Good adhesion and reliable vias result.

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