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Image-Reversal Lift-Off Profile for Thin Resist

IP.com Disclosure Number: IPCOM000043519D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Forster, T: AUTHOR

Abstract

In precision lithography image-reversal processes are employed utilizing positive resists that, through the addition of suitable compounds, become negative-acting. However, these processes are not applicable for resist thicknesses lower than approximately 1 mm since, caused by the rounding-off of the resist profile, one does not obtain the undercut profile required for lift-off. To improve linewidth accuracy, an additional chlorobenzene process step is introduced that substantially sharpens the resist profile and permits the use of resist films of 0.5 mm thickness. After its application, the resist is heated in air (e.g., for 8 minutes at 60ŒC), then soaked in chlorobenzene (2 to 3 minutes), and again heated (e.g., for 10 minutes at 80ŒC).

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Image-Reversal Lift-Off Profile for Thin Resist

In precision lithography image-reversal processes are employed utilizing positive resists that, through the addition of suitable compounds, become negative-acting. However, these processes are not applicable for resist thicknesses lower than approximately 1 mm since, caused by the rounding-off of the resist profile, one does not obtain the undercut profile required for lift-off. To improve linewidth accuracy, an additional chlorobenzene process step is introduced that substantially sharpens the resist profile and permits the use of resist films of 0.5 mm thickness. After its application, the resist is heated in air (e.g., for 8 minutes at 60OEC), then soaked in chlorobenzene (2 to 3 minutes), and again heated (e.g., for 10 minutes at 80OEC). Subsequently, the conventional process steps are carried out: image exposure, post exposure bake, blanket exposure, image development. These steps are followed by the deposition of the pattern which is determined by the stencil obtained through the described process, the resulting pattern being complementary to the pattern to which the resist had been exposed.

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