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Electrostatic Gettering of Foreign Materials in Semiconductor Manufacturing Tools

IP.com Disclosure Number: IPCOM000043589D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Halbot, M: AUTHOR [+3]

Abstract

Foreign materials (high particulate levels on wafer), such as silicon particles, are one of the primary causes of defects in semiconductor manufacturing, and strongly influence both yield and reliability product objectives. Control and reduction of foreign materials in the hoods of some tools, like ion implanters, to meet product yield objectives are a requisite. Primary sources of foreign materials include: inadequately clean hood configuration, wafer breakage within the end station, end station components producing wafer scratching and edge chipping, misalignment between wafer guide and platen, etc.

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Electrostatic Gettering of Foreign Materials in Semiconductor Manufacturing Tools

Foreign materials (high particulate levels on wafer), such as silicon particles, are one of the primary causes of defects in semiconductor manufacturing, and strongly influence both yield and reliability product objectives. Control and reduction of foreign materials in the hoods of some tools, like ion implanters, to meet product yield objectives are a requisite. Primary sources of foreign materials include: inadequately clean hood configuration, wafer breakage within the end station, end station components producing wafer scratching and edge chipping, misalignment between wafer guide and platen, etc. In order to guarantee repeatable implanter operations, many manufacturing controls have been necessary so far, including: weekly qualification involving the processing of 100-200 blanket wafers used as a gettering source (and new qualification after each wafer breakage), end station inspection and repair, cleaning of the hood, etc. These steps lowered the throughput of the equipment, and, in addition, the results were not excellent. Therefore, this article suggests a new technique of electrostatic gettering of particulates involving the processing of only a few silicon wafers (N5) coated with an SiO2 insulated layer on a regular basis. The SiO2 layer is charged with an "electrostatic charging rod" which is commercially available and will act as a very efficient gettering source of part...