Browse Prior Art Database

Process for Forming Gate and Storage Node Dielectrics

IP.com Disclosure Number: IPCOM000043629D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Koburger, CW: AUTHOR [+4]

Abstract

The process described below makes possible the independent formation of oxidation barrier masking films and gate and storage node dielectrics in self-aligned multiple dielectric device structures. Many existing processes which use dual dielectric (nitride/oxide) films as an oxidation barrier masking structure, retain portions of those films for use as gate and storage node dielectrics. This dual application of the dielectric materials limits the designer's ability to optimize the resulting structure. Following is a sequence of process steps which together with Figs.

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Process for Forming Gate and Storage Node Dielectrics

The process described below makes possible the independent formation of oxidation barrier masking films and gate and storage node dielectrics in self-aligned multiple dielectric device structures. Many existing processes which use dual dielectric (nitride/oxide) films as an oxidation barrier masking structure, retain portions of those films for use as gate and storage node dielectrics. This dual application of the dielectric materials limits the designer's ability to optimize the resulting structure. Following is a sequence of process steps which together with Figs. 1-5 illustrate how to better use the oxidation masking films to result in desired dielectric structures for use in gate and storage node applications: a) An oxidation barrier structure consisting of an SiO2 layer 12 and a Si3N4 layer 14 are formed on a silicon

substrate 10. b) A photoresist mask 16 is formed on the oxidation

barrier structure with openings 17 and 18 for the formation

of an active FET portion and a storage node region,

respectively. c) Using the photoresist mask as an ion implantation mask, a doped region 19 is formed in substrate 10 to make

source and drain regions and a doped region 21 for use as

the storage node. d) A second photoresist mask 23 is applied to cover the storage node region 21, and the Si3N4 layer 14 is removed

in opening 17 to make the source and drain regions. e) The photoresist masks 16 and 23 are removed, and th...