Browse Prior Art Database

Semiconductor Resistor

IP.com Disclosure Number: IPCOM000043651D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Dahmen, M: AUTHOR [+4]

Abstract

This article describes a semiconductor resistor, consisting of a stripe-formed resistor zone having contacts at both ends, the zone being formed by re-doping a corresponding region of a semiconductor layer. The specified semiconductor resistor is designed as P-resistor zone B in an N-epitaxial layer 2 applied on a P-substrate 1. Fig. 1 depicts the structure of the complete semiconductor resistor in a plan view. The effective width B' of the semiconductor resistor is determined by limitation zones A externally overlapping resistor zone B and being of the opposite conductivity type and of a higher absolute concentration. First, as shown by the sectional view I-II of the structure of Fig. 1 in Fig.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 96% of the total text.

Page 1 of 2

Semiconductor Resistor

This article describes a semiconductor resistor, consisting of a stripe-formed resistor zone having contacts at both ends, the zone being formed by re-doping a corresponding region of a semiconductor layer. The specified semiconductor resistor is designed as P-resistor zone B in an N-epitaxial layer 2 applied on a P- substrate 1. Fig. 1 depicts the structure of the complete semiconductor resistor in a plan view. The effective width B' of the semiconductor resistor is determined by limitation zones A externally overlapping resistor zone B and being of the opposite conductivity type and of a higher absolute concentration. First, as shown by the sectional view I-II of the structure of Fig. 1 in Fig. 2A, the N+ limitation zone A defining the width B' of the complete resistor zone B is inserted into N-epitaxial layer 2, using an A mask 3. Subsequently, as shown in the corresponding sectional view I-II in Fig. 2B, P-resistor zone B is introduced, using B mask 4, with the mask opening reliably overlapping N+ limitation zones A. As N+ limitation zones A have a higher doping concentration than P-resistor zone B, the effective width B' of the final resistor zone B with contacts 5 will be defined by the width of the region not covered by limitation zones A, and by the limiting lateral outdiffusion of A into resistor zone B. With given minimum dimensions and given resistor zone doping processes a higher resistivity can thus be reached.

1

Page 2 of 2

2

...