Browse Prior Art Database

Semiconductor Substrate Contact

IP.com Disclosure Number: IPCOM000043711D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Penoyer, RF: AUTHOR

Abstract

A semiconductor substrate contact is made between a substrate and the surface of a semiconductor chip by utilizing the mechanically damaged subcollector to substrate junction around the periphery of a diced chip to establish electrical continuity. As indicated in the figure, a P-type semiconductor substrate 10 and an N type epitaxial layer 12 have an N+ subcollector region 14 interposed therebetween in chip 15. Trenches 16 and 18 filled with an insulating material, e.g., an oxide 20, extend from the surface of epitaxial layer 12 to substrate 10 through N+ subcollector region 14. An N+ reach-through region 22 passes through epitaxial layer 12 to the N+ subcollector region 14 and a ground pad 24 is connected to reach- through 22 through insulating layer 25.

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Semiconductor Substrate Contact

A semiconductor substrate contact is made between a substrate and the surface of a semiconductor chip by utilizing the mechanically damaged subcollector to substrate junction around the periphery of a diced chip to establish electrical continuity. As indicated in the figure, a P-type semiconductor substrate 10 and an N type epitaxial layer 12 have an N+ subcollector region 14 interposed therebetween in chip 15. Trenches 16 and 18 filled with an insulating material, e.g., an oxide 20, extend from the surface of epitaxial layer 12 to substrate 10 through N+ subcollector region 14. An N+ reach-through region 22 passes through epitaxial layer 12 to the N+ subcollector region 14 and a ground pad 24 is connected to reach- through 22 through insulating layer 25. An active region 26 isolated by trenches 16 and 18 may contain one or more active devices, such as an NPN bipolar transistor. As is known, under certain conditions in the active region 26, electrons are produced in substrate 10 which must be carried through substrate 10 to a ground pad such as pad 24. Since the edge or side 28 of chip 15, having been subjected to, e.g., a diamond saw cut, is mechanically damaged, and thereby electrically damaged, electrical continuity is established between P-type substrate 10 and N+ subcollector region 14 around the periphery of chip 15 at edge or side 28. Thus, electrons located in P substrate 10 are carried to ground pad 24 through damaged edge...