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Highly Stable Power Supply Regulating Structure on Semiconductor Chips

IP.com Disclosure Number: IPCOM000043770D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Brodsky, MH: AUTHOR [+2]

Abstract

An on-chip integrated power supply regulating structure is provided using built-in capacitor stacks for reserved charge storage in the semiconductor substrate. The storage stacks are a series of p-n-p-n... alternating layers in the substrate below the device area of the chip. These layers, when selectively connected, i.e., connecting all p- and all n-regions together, respectively, form a huge charge reservoir between the two regions. When a constant voltage supply is connected with negative and positive sides to the p- and n- side of the stacks, respectively, the depletion space charges of the p-n junction stacks are capable of supplying any local rapid current transient.

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Highly Stable Power Supply Regulating Structure on Semiconductor Chips

An on-chip integrated power supply regulating structure is provided using built- in capacitor stacks for reserved charge storage in the semiconductor substrate. The storage stacks are a series of p-n-p-n... alternating layers in the substrate below the device area of the chip. These layers, when selectively connected,
i.e., connecting all p- and all n-regions together, respectively, form a huge charge reservoir between the two regions. When a constant voltage supply is connected with negative and positive sides to the p- and n- side of the stacks, respectively, the depletion space charges of the p-n junction stacks are capable of supplying any local rapid current transient. These rapid current transients in an insufficiently regulated power supply system may cause local transient voltage dips, which in turn affect the high speed switching performance. Fig. 1 is a schematic diagram of the vertical profile of a possible chip configuration. The stack of alternating n- and p-layers is epitaxially grown with a device layer on top of the structure. The selective contacts may be made by conventional reach- through diffusion or suitable alloying technique, as schematically shown for the n+ layers. With respect to the selective connections for the p-n-p-n... stack structures, an alternative method instead of conventional reach-through diffusion or alloying can be employed. In the process of preparing the p...