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Polymer Film Isolation Method

IP.com Disclosure Number: IPCOM000043777D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Goldblatt, RD: AUTHOR [+2]

Abstract

A polymer film isolation method has widespread applicability for the isolation of free-standing thin polymer films. A silicon wafer with a thin ( 4000 ˜) oxide coating is placed on a photoresist spinning apparatus and flooded with a solution of the polymer for which a thin film is desired. Spin the wafer, fixing the concentration of the polymer solution, as well as the spinning parameters, such as spin speed, time and acceleration. A large range of final film thicknesses can be achieved according to the parameters fixed. Subject the spun wafer to an appropriate curing schedule for the given polymer, then submerge it in hydrofluoric (HF) acid for approximately 5 - 10 seconds, enabling the HF acid to attack the silicon oxide between the polymer film and the silicon wafer, lifting off the polymer film.

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Polymer Film Isolation Method

A polymer film isolation method has widespread applicability for the isolation of free-standing thin polymer films. A silicon wafer with a thin ( 4000 ~) oxide coating is placed on a photoresist spinning apparatus and flooded with a solution of the polymer for which a thin film is desired. Spin the wafer, fixing the concentration of the polymer solution, as well as the spinning parameters, such as spin speed, time and acceleration. A large range of final film thicknesses can be achieved according to the parameters fixed. Subject the spun wafer to an appropriate curing schedule for the given polymer, then submerge it in hydrofluoric (HF) acid for approximately 5 - 10 seconds, enabling the HF acid to attack the silicon oxide between the polymer film and the silicon wafer, lifting off the polymer film. Rinse the free standing film in flowing DI water and dry it. The result is a free-standing polymer film. Note that the film doesn't have to be spun on. It may be sprayed on or meniscus coated, as long as it is done on a silicon oxide or any surface susceptible to HF attack.

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